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tei Solutions, MEARS Technologies and K2 Energy Collaborate for Improved Efficiency of Solar Cells
December 20, 2010
MEARS Technologies achieves milestone of 50 granted US patents
September 30, 2010
MEARS Technologies and K2 Energy announce License and Collaboration Agreement
March 8, 2010
MEARS Technologies achieves milestone of 75 granted patents worldwide
October 28, 2009
MEARS Technologies achieves milestone of 50 granted patents worldwide
October 7, 2008
MEARS Technologies joins forces with Elpida Memory to improve chip performance
Japanese version
MEARS Technologies / Porter Novelli
March 17, 2008
Materials Play A Key Role In Stopping Leakage
Electronic Design [Engineering Feature]
November 5, 2007
MEARS Technologies achieves milestone of 25 granted US patents
October 9, 2007
MEARS Technologies chosen to present at
SEMICON WEST 2007 Technology Innovation Showcase
MEARS Technologies / Porter Novelli
July 16, 2007
MEARS Technologies appoints Roger Bitter
Vice President of Sales and Business Development
MEARS Technologies / Porter Novelli
July 16, 2007
Innovative band engineering techniques target CMOS gate leakage dilemma
Embedded Computing Design
July 2007
Tackling power/performance trade-offs with silicon channel engineering
Solid State Technology
July 1, 2007
Atomic Layer Control Gives Better Performing Gate Materials, Uniform Batch ALD
Semiconductor International
June 29, 2007
Microprocessor Forum 2007
EDN Japan
May 24, 2007
Intel to Put Chips Upfront and Center
San Jose Mercury News
May 21, 2007
MEARS Technologies to Present at Microprocessor Forum 2007
New Semiconductor Technology Enhances Drive Current, Lowers Leakage
May 22, 2007
SEMI Announces Recipients of Technology Innovation Showcase Awards
SEMI
May 8, 2007
Addressing Gate Leakage With Reengineered Silicon
Semiconductor International
March 1, 2007
MEARS LLC Claims ''Superlattice'' Is a Knob Worth Turning
WeSRCH.com (VLSI Research)
January 15, 2007
Mears Technologies Addresses Gate Leakage with Band Engineering Process
Solid State Technology/Wafer News
January 2, 2007
Superlattice Channel Addresses Gate Leakage
Semiconductor International
January 1, 2007
Leakage Current and Parasitic Capacitance Rethinking Deposition May be the Answer
EDN Online
December 18, 2006
Last Semi Roadblock Cleared ?
EE Times Online
December 14, 2006
Start-up Claims Gate Leakage Breakthrough Using ``Superlattice'' Layer
Semiconductor Fabtech Online
December 11, 2006
Mears Claims to Reduce Gate Leakage 60%-80%
Electronic News, EDN Online, Semiconductor International Newsletter
December 11, 2006
Embedded Superlattice Slashes Gate Leakage
EE Times, CommsDesign.com
December 11, 2006
MEARS Technologies Launched to Resolve Critical Issue Facing the Semiconductor Industry
MEARS Technologies / Porter Novelli
December 11, 2006
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